MicroLED

MicroLEDs are ultrasmall LED’s (light emitting diodes) typically ranging from 1 to 10 µm in size.

With such small dimensions, these semiconductor based microLEDs qualify for applications in the micro-display and -projector segment.

Their potential is based on delivery of high contrast, wide colour gamut, high brightness, while still being energy efficient.

Polar Light Technologies’ microLEDs

Polar Light Technologies’ microLEDs are based on InGaN/GaN pyramidal structures. These pyramidal structures are grown by a novel bottom-up technique, which in contrast to the conventional top-down technique does not require etching. This technique allows for sub-µm sized LED dimensions with maintained exceptional properties and performance.

The pyramidal LED design additionally provides narrow light lobe characteristics, which will further enhance the microLED’s efficiency since a larger fraction of the light can be used.

The same InGaN/GaN material system is used for the red, green and blue (RGB) emissions, allowing integration with electronics by means of mass transfer, flip-chip or other monolithic integration techniques.

Pyramidal GaN Articles

2022
Son Phuong Le,a) Chih-Wei Hsu, Ivan Martinovic, and Per-Olof Holtz
GaN-based light-emitting materials prepared by hot-wall metal-organic chemical vapor deposition
https://link.springer.com/article/10.1007/s00339-022-05865-7

2021
Son Phuong Le,a) Chih-Wei Hsu, Ivan Martinovic, and Per-Olof Holtz
GaN-based pyramidal quantum structures for micro-size light-emitting diode applications
https://doi.org/10.1063/5.0048684

2015
Tomas Jemsson, Houssaine Machhadani, Per-Olof Hotlz, K Fredrik Karlsson
Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid
https://iopscience.iop.org/article/10.1088/0957-4484/26/6/065702/meta

2014
Anders Lundskog , Chih-Wei Hsu, K Fredrik Karlsson , Supaluck Amloy, Daniel Nilsson1 , Urban Forsberg, Per Olof Holtz1 and Erik Janzen
Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots
https://www.nature.com/articles/lsa201420

2014
ATomas Jemsson, Houssaine Machhadani, Per-Olof Hotlz, K Fredrik Karlsson, Chih-Wei Hsu
Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot
https://pubs.aip.org/aip/apl/article-abstract/105/8/081901/1077788/Linearly-polarized-single-photon-antibunching-from?redirectedFrom=fulltext

2013
Per Olof Holtz, Chih Wei Hsu, Anders Lundskog, K. Fredrik Karlsson, Urban Forsberg, Erik Janzén
Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays
https://www.scientific.net/AMR.646.34

2012
Anders Lundskog, Urban Forsberg, Per Olof Holtz and Erik Janzén
Morphology Control of Hot-Wall MOCVD Selective Area Grown Hexagonal GaN Pyramids
https://pubs.acs.org/doi/abs/10.1021/cg301064p

2012
A Lundskog, J Palisaitis, C W Hsu, M Eriksson, K F Karlsson, L Hultman, P O Å Persson, U Forsberg, P O Holtz and E Janzén
InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
https://iopscience.iop.org/article/10.1088/0957-4484/23/30/305708/meta

2011
Anders Lundskog, C.W. Hsu, D. Nilsson, K.F. Karlsson, U. Forsberg, P.O. Holtz, E. Janzén
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
https://www.sciencedirect.com/science/article/abs/pii/S0022024812008111

2011
Chih-Wei Hsu, Anders Lundskog, K. Fredrik Karlsson, Urban Forsberg, Erik Janz en, and Per Olof Holtz*
Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays
https://pubs.acs.org/doi/full/10.1021/nl200810v